Wafer Manufacturing

Stress relief is a crucial process deployed to mitigate substrate stress caused by grinding-induced cracks. It involves removing a few microns from the substrate, typically ranging from 5 to 15µm. The objective is to maintain uniformity, with targets of <3% variation within a wafer and <5% from wafer to wafer. Effective equipment control is vital for managing the exothermic reaction associated with this process.

Sicozone clean is a versatile solution widely used in chip manufacturing. It serves various purposes, including cleaning organics and metals, as well as performing oxide etches. Applications range from pre-implantation to furnace processses by addressing gate oxides, tunnel oxides, and channel oxides. Additionally, it is deployed in advanced packaging for diced wafers. Standard benchmarks include particle counts below 20 @ 0.12µm, contamination levels below 1E10 for metals, and uniformities less than 1%. Furthermore, it boasts minimal chemical and water consumption while delivering high cleaning efficiency.

RCA Clean is a conventional method used in semiconductor processes for cleaning organics, metals, and performing oxide etches. It meets industry standards with particle counts consistently below 20 @ 0.12µm, minimal metal contamination below 1E10, and uniformities consistently less than 1%. This well-established technique remains effective in chip manufacturing for maintaining cleanliness and performance.