SicOzone

Sustainable Cleaning & Stripping with Ozone

The uniqueness of SicOzone lies in its high efficacy and ability to replace substances like H₂SO₄ and H₂O₂, making it a standout choice for the semiconductor industry.

 

Features and benefits

Particle performance

<20 adders/>0.12μm

Metal contamination

Al, Mg 5E10/others 2E10

Non-uniformity

< 1%

Oxygen only
No need of

sulfuric acid & hydrogen peroxide

Cleaning efficiency

>99%

SicOzone

Benefits of cleaning and stripping with ozone

SicOzone enables the achievement of superior results in cleaning and stripping within the semiconductor manufacturing industry. On one hand, the intelligent utilization of ozone in conjunction with variable amounts of ammonia, hydrochloric acid, hydrofluoric acid, and water ensures outstanding cleaning performance. On the other hand, the photoresist stripping process harnesses ozone to promote sustainable resource usage. This process involves combining DI water with ozone in gas form to effectively remove photoresist from the wafer surface.

Reduction of cost per wafer
%
Throughput increase
%
Reduction of chemical consumption
%
Reduction of waste treatment
%

*Compared to conventional processes

SicOzone Strip

Photoresist strip on metal layer

The photoresist stripping process utilizes ozone, promoting sustainable resource usage.

SicOzone Strip

DI water & ozone

It involves DI water combined with ozone in gas form to effectively remove photoresist from the wafer surface.

SicOzone Strip

Efficient photoresist removal

Two alternating steps in the recipe ensure efficient photoresist removal, accommodating various resist types, from positive to negative, implanted to high-treated resists.

SicOzone Strip

Maximize removal

Additionally, spiking small amounts of chemical into the DI water stream enhances the removal process, maximizing the removal rate.

SicOzone Clean FOEL

To cover DHF

To remove or thin any kind of oxide in the FEOL a DHF step is performed. With Inline spiking technology DHF ratios from 0.006% to 0.15% are possible (with spiked 49%HF).

SicOzone Clean FOEL

To cover SC1

The sustainable alternative for organic residue clean from the wafer surface consists of Ammonia, Ozone and DI Water. The DI – ammonia mix vary from 50 : 1 to 1000 : 1. That means very small amounts of Ammonia are spiked into the DI water stream. Additional, to the DI Water – Ammonia mix injected from one side of the process chamber, Ozone in  gasform is injected from the other side. With this all its effectivity is enhanced directly on the wafer surface.

SicOzone Clean

To cover SC2

Almost like the organic removal the clean of metallic residues works. The mix to clean metallic resiudes from the wafer surface consists of Hydrocloric Acid (HCl), Ozone and DI Water. The DI Water – HCl mix vary from 300:1 to 1000:1. That means very small amount of HCl are spiked into the DI water stream. Additional, to the DI Water – HCl mix injected from one side of the process chamber, Ozone in  gasform is injected from the other side. If no contamination of noble metals is expected Ozone is not needed.

Sustainability

Green Goals. Yellow Solutions.

Technology is all around us, shaping our daily lives and making them better. Siconnex is redefining progress by merging technology and sustainability, no longer presenting them as opposites. Sustainable technology for the progress of tomorrow. Green Goals. Yellow Solutions.

Sustainability

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